Typical Characteristics
5
V GS = 10V
4.5V
2.8
4
6.0V
2.6
2.4
2.2
V GS = 3.5V
3
3.5V
2
1.8
2
1.6
1.4
4.0V
4.5V
1
3.0V
1.2
1
5.0V
6.0V
10V
0
0
0.5
1
1.5
2
0.8
0
1
2
3
4
5
1.6
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
I D = 1.4A
V GS = 10V
0.225
I D = 0.7A
1.4
0.2
1.2
1
0.175
0.15
T A = 125 o C
0.125
0.8
0.1
T A = 25 o C
0.6
0.075
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
T J , JUNCTION TEMPERATURE ( C)
o
Figure 3. On-Resistance Variation with
Temperature.
5
V DS = 5V
4
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V GS = 0V
1
3
0.1
T A = 125 o C
25 o C
2
T A = 125 o C
0.01
-55 o C
1
0
25 o C
-55 o C
0.001
0.0001
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS351AN Rev E(W)
相关PDF资料
NDS355AN MOSFET N-CH 30V 1.7A SSOT3
NDS355N MOSFET N-CH 30V 1.6A SSOT3
NDS7002A MOSFET N-CH 60V 280MA SOT-23
NDS8425 MOSFET N-CH 20V 7.4A 8SOIC
NDS8434 MOSFET P-CH 20V 6.5A 8-SOIC
NDS8947 MOSFET 2P-CH 30V 4A 8-SOIC
NDS9400A MOSFET P-CH 30V 3.4A 8-SOIC
NDS9407 MOSFET P-CH 60V 3A 8-SOIC
相关代理商/技术参数
NDS351AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS351AN_Q 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS351AN-CUT TAPE 制造商:FAIRCHILD 功能描述:NDS Series N-Channel 30 V 160 mO Logic Level PowerTrench Mosfet SSOT-3
NDS351ANX 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel 30V 1.2A SuperSOT3
NDS351N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS351N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS352AP 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS352AP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23